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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
MMBT3904 NPN switching transistor
Product specification Supersedes data of 2002 May 13 2002 Oct 04
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES * Collector current capability IC = 200 mA * Collector-emitter voltage VCEO = 40 V. APPLICATIONS * General switching and amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: MMBT3906. MARKING TYPE NUMBER MMBT3904 Note 1. = p: Made in Hong Kong. = t: Made in Malaysia.
Top view
MMBT3904
QUICK REFERENCE DATA SYMBOL VCEO IC PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) MAX. 40 200 UNIT V mA
MARKING CODE(1) 7A
handbook, halfpage
3 3 1 2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. 60 40 6 200 200 100 250 +150 150 +150 V V V mA mA mA mW C C C UNIT
2002 Oct 04
2
Philips Semiconductors
Product specification
NPN switching transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; see Fig.2; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz IC = 100 A; VCE = 5 V; RS = 1 k; f = 10 Hz to 15.7 kHz 60 80 100 60 30 - - 650 - - - 300 - - - - - MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500
MMBT3904
UNIT K/W
MAX. 50 50
UNIT nA nA
300 - - 200 300 850 950 4 8 - 5 mV mV mV mV pF pF MHz dB
Switching times (between 10% and 90% levels); see Fig.3 td tr ts tf Note 1. Pulse test: tp 300 s; 0.02. delay time rise time storage time fall time ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA - - - - 35 35 200 50 ns ns ns ns
2002 Oct 04
3
Philips Semiconductors
Product specification
NPN switching transistor
MMBT3904
handbook, halfpage
500
MGU821
MGU822
handbook, halfpage
250
h FE 400
(1)
IC (mA)
(1)
(2)
(3)
(4)
(5) (6)
(7)
200
300
150
(8) (2) (9)
200
100
(10) (3)
100
50
0 10 -1
1
10
102
I C (mA)
103
0 0 Tamb = 25 C. 2 4 6 8 10 VCE (V)
VCE = 1 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
(1) (2) (3) (4)
IB = 5.5 mA. IB = 5 mA. IB = 4.5 mA. IB = 3.5 mA.
(5) (6) (7) (8)
IB = 3 mA. IB = 2.5 mA. IB = 2 mA. IB = 1.5 mA.
(9) IB = 1 mA. (10) IB = 0.5 mA.
Fig.3 Fig.2 DC current gain; typical values.
Collector current as a function of collector-emitter voltage.
handbook, halfpage
1200
MGU823
MGU824
VBE (mV) 1000
handbook, halfpage
1200
VBEsat (mV)
1000
(1) (1) (2)
800
(2)
800
600
600
(3)
(3)
400
400
200 10 -1
1
10
102
I C (mA)
103
200 10 -1
1
10
102
I C (mA)
103
VCE = 1 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.4
Base-emitter voltage as a function of collector current.
Fig.5
Base-emitter saturation voltage as a function of collector current.
2002 Oct 04
4
Philips Semiconductors
Product specification
NPN switching transistor
MMBT3904
103 handbook, halfpage
MGU825
VCEsat (mV)
(1) (2) (3)
102
10 10 -1
1
10
102
I C (mA)
103
IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.6
Collector-emitter saturation voltage as a function of collector current.
handbook, full pagewidth
VBB
VCC
RB oscilloscope Vi R1 (probe) 450 R2
RC Vo (probe) 450 DUT oscilloscope
MLB826
Vi = 5 V; T = 500 s; tp = 10 s; tr = tf 3 ns. R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 . VBB = -1.9 V; VCC = 3 V. Oscilloscope: input impedance Zi = 50 .
Fig.7 Test circuit for switching times.
2002 Oct 04
5
Philips Semiconductors
Product specification
NPN switching transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
MMBT3904
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2002 Oct 04
6
Philips Semiconductors
Product specification
NPN switching transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
MMBT3904
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 Oct 04
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/03/pp8
Date of release: 2002
Oct 04
Document order number:
9397 750 10242

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